4.5 kV 4H-SiC diodes with ideal forward characteristic

H. Lendenmann; A. Mukhitdinov; F. Dahlquist; H. Bleichner; M. Irwin; R. Soderholm

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Article . 2002 . Peer-reviewed

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4.5 kV 4H-SiC diodes with ideal forward characteristic

descriptionPublicationkeyboard_double_arrow_right Article 13 Nov 2002Publisher:Inst. Electr. Eng. JapanJournal:Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216)

Authors: H. Lendenmann; A. Mukhitdinov; F. Dahlquist; H. Bleichner; M. Irwin; R. Soderholm;

doi: 10.1109/ispsd.2001.934553

4.5 kV 4H-SiC diodes with ideal forward characteristic

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Abstract

4H-SiC diodes with 4.5 kV blocking and epitaxially grown anode emitters show near theoretical forward voltages of 3.08 V at 100 A/cm/sup 2/ and 4.10 V at 1000 A/cm/sup 2/ at RT (2.96 V and 4.15 V at 125/spl deg/C), while diodes with implanted emitters show 3.5-3.8 V at 100 A/cm/sup 2/ with -4 mV/K. The transient recovery losses (E/sub rec/, Q/sub rr/) are as low as 1/100 of the reference silicon device. Paralleling of the SiC diodes with silicon IGBTs enables 400 A switching, and system loss savings of nearly 50% compared to state-of-art silicon technology.

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