An advanced FWD design concept with superior soft reverse recovery characteristics

descriptionPublicationkeyboard_double_arrow_right Article 07 Nov 2002Publisher:IEEEJournal:12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

Authors: M. Nemoto; A. Nishiura; T. Naito; M. Kirisawa; M. Otsuki; Y. Seki;

doi: 10.1109/ispsd.2000.856786

An advanced FWD design concept with superior soft reverse recovery characteristics

- Summary
- Metrics

Abstract

In this paper an improved FWD design concept has been investigated having superior soft reverse recovery behavior, for the first time. The basic concept of the FWD design is a combination of low anode injection efficiency (MPS structure) and inhomogeneous lifetime controlling (platinum) in order to achieve the optimum carrier distributions. From experimental results, the rate of the rise in the cathode voltage (dV/dt) can be dramatically reduced. The new diode exhibits superior characteristics of the soft recovery than that of the conventional MPS diode, especially in the low current turn-on of the IGBT.

Impact byBIP!

	selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	10
	popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.	Average
	influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	Top 10%
	impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.	Average