SiGe BiCMOS technology for mm-wave systems

descriptionPublicationkeyboard_double_arrow_right Article , Conference object 01 Nov 2012Publisher:IEEEJournal:2012 International SoC Design Conference (ISOCC)

Authors: Holger Rücker; Bernd Heinemann;

doi: 10.1109/isocc.2012.6407091

SiGe BiCMOS technology for mm-wave systems

- Summary
- Metrics

Abstract

This paper reviews a 0.13 µm BiCMOS technology with high-speed SiGe HBTs featuring maximum oscillation frequencies f max of 500 GHz, transit frequencies f T of 300 GHz, and CML ring oscillator gate delays of 2.0 ps. The HBTs exhibit breakdown voltages BV CEO of 1.6 V and BV CBO of 5.1 V. The improvement of RF performance compared to the preceding HBT generation is attributed to scaled lateral device dimensions, modified vertical doping profiles, a reduced thermal budget, a lower silicide resistance, and a changed wafer orientation.

Impact byBIP!

	selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	15
	popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.	Top 10%
	influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	Top 10%
	impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.	Average