Summary form only given. The quality of electrical tests during irradiation of components has also improved a lot. Test patterns have been modified and characteristics of recent DRAMs have had to be taken into account. We can also observe a trend in the results of soft error tests. In the beginning, we mostly got single-bit events and did not ask for more. The trend is now moving toward a complete listing of error rates for any number of fail-bits per event in combination with the fail-bit addresses. Soft errors with fail-counts up to several thousand per event have to be handled by the tests.