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Nonvolatile SRAM Cell

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 2006Publisher:IEEEJournal:2006 International Electron Devices Meeting
Authors: Wei Wang; Aaron Gibby; Zheng Wang; Tze Wee Chen; Shinobu Fujita; Peter Griffin; Yoshio Nishi; +1 Authors

doi: 10.1109/iedm.2006.346730

Nonvolatile SRAM Cell

Abstract

A nonvolatile SRAM cell with two back-up nonvolatile memory devices is proposed. This novel cell offers non-volatile storage, thus allowing selected blocks of SRAM to be powered down during operation. There is no area penalty. A slight performance penalty is anticipated.

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
53
Top 10%
Top 10%
Top 10%
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