High-Efficiency CMOS Charge Pump

descriptionPublicationkeyboard_double_arrow_right Article , Conference object 01 Dec 2006Publisher:IEEEJournal:2006 13th IEEE International Conference on Electronics, Circuits and Systems

Authors: Laura Gobbi; Alessandro Cabrini; Guido Torelli;

doi: 10.1109/icecs.2006.379891

High-Efficiency CMOS Charge Pump

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Abstract

A charge pump topology with enhanced driving capability for very low voltage applications is presented. The proposed scheme is able to operate with a supply voltage as low as 900 mV and ensures high voltage gain, high driving capability, and high power efficiency over the whole current range. A suitable boosting circuit allows adequately low on-resistance of transfer devices while still limiting the impact of parasitic capacitances. Simulation results show the effectiveness of the proposed approach.

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University of Pavia
Italy

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