A GIDL-Current Model for Advanced MOSFET Technologies Implemented into HiSIM2

descriptionPublicationkeyboard_double_arrow_right Article 01 Jul 2007Publisher:IEEEJournal:2007 International Conference on Communications, Circuits and Systems

Authors: R. Inagaki; M. Miura-Mattausch; Y. Inoue;

doi: 10.1109/icccas.2007.4348228

A GIDL-Current Model for Advanced MOSFET Technologies Implemented into HiSIM2

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Abstract

A GIDL (Gate Induced Drain Leakage) current model for advanced MOSFETs has been proposed and implemented into HiSIM2, first complete surface potential based model. The model consists of one tunneling mechanism considering two tunneling currents, band to band tunneling (BTBT) and trap assisted tunneling (TAT), and requires totally 7 model parameters covering all bias conditions. Simulation results of NFETs and PFETs reproduce measurements for any device size without binning. Validity of the model has been tested with a circuit, which is sensitive to the change of the stored charge due to tunneling current.

Related Organizations

Hiroshima University
Japan
Waseda University
Japan

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