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Low noise and high gain CMOS down conversion mixer

Authors: null Tuan-Anh Phan; null Chang-Wan Kim; null Min-Suk Kang; null Sang-Gug Lee; null Chun-Deok Su;

Low noise and high gain CMOS down conversion mixer

Abstract

The paper represents a lowest noise ever high gain CMOS direct down-conversion mixer for 1.8 GHz applications, like GSM, PCS, etc., based on 0.18 /spl mu/m CMOS technology. The designed mixer uses the current bleeding technique and an extra inductor to improve the conversion gain and noise figure (NF). Also, with an extra inductor and the careful choosing of transistor sizes, the mixer has the lowest ever reported flicker noise. Simulation results show the voltage conversion gain of 28.2 dB, the single-side band (SSB) NF of 4.09 dB. Flicker noise cut-off frequency is just a few kHz. SSB NF at 50 Hz reaches 16.8 dB. The circuit operates at the supply voltage of 1.8 V, and dissipates 11.34 mW.

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
9
Average
Top 10%
Top 10%
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