TFET (Tunnel field effect transistor) is widely used in low voltage operating electronic devices because of the ability to achieve a subthreshold swing lower than 60mV/decade. Lower subthreshold swing is also a root cause for the low power and the high speed behavior of the device. Conduction of current in TFET is due to band to band tunneling. TFET has lower-off currents as compared to MOSFET. Because of which power dissipation is also lower. In this paper, Kane-Sze formula based analytical model is used to evaluate and improve drain current. Using this analytic model, the obtained value of drain current is 2.3mA at V ds =0.4V, transconductance (gm) is 160V−1, transconductance to drain current ratio is 2200 V−1, output resistance (R0) is 1.E4 ohm, intrinsic gain of the TFET is obtained 1.0E5 V/V. The fabrication of TFET is done using Sentaurus TCAD tool. Also, the output characteristics of the TFET and tunneling phenomenon have been analyzed.