A bulk-driven super MOS transistor (BD-SMT) for low voltage operation is presented. The proposed transistor achieves a high effective transconductance (G m(eff) ), high effective drain impedance (R D(eff) ) and low effective source impedance (R S(eff) ). BD-SMT is designed based on regulated self-cascode and negative feedback techniques. The transistor been designed using a 0.18 µm CMOS technology and operated from a 0.4 V supply with a static power consumption of 12 µW. The simulation results showed higher G m(eff) , larger R D(eff) and smaller R S(eff) as compared to those of simple bulk-driven MOS transistor.