Dimensionless parameters of reactive ion etching

Name: Dimensionless parameters of reactive ion etching
Creator: R.H. McCafferty
Keywords: 0502 economics and business, 05 social sciences, 0101 mathematics, 01 natural sciences

descriptionPublicationkeyboard_double_arrow_right Article , Other literature type 13 Jan 2003Publisher:IEEEJournal:Proceedings., 39th Electronic Components Conference

Authors: R.H. McCafferty;

doi: 10.1109/ecc.1989.77835

Dimensionless parameters of reactive ion etching

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Abstract

The derivation and character of dimensionless parameters for the semiconductor manufacturing process of reactive ion etching (RIE) in generic form are discussed. Data from characterizations of a variety of films processed under a variety of etching regimes to establish the validity of derived parameters are presented. Fundamental realizations regarding the interrelationship of parameters in plasma-driven etching reactions are outlined, and the theory underlying the derivation itself is given. >

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