GaN Device Technology: Manufacturing, Characterization, Modelling and Verification

descriptionPublicationkeyboard_double_arrow_right Article , Conference object 01 Apr 2008 Italy Publisher:IEEEJournal:2008 14th Conference on Microwave Techniques

Authors: CICCOGNANI, WALTER; GIANNINI, FRANCO; LIMITI, ERNESTO; Longhi, PE; Nanni, A; SERINO, ANTONIO; Lanzieri, C; +5 Authors

doi: 10.1109/comite.2008.4569884

handle: 11583/1785921 , 2108/49540

GaN Device Technology: Manufacturing, Characterization, Modelling and Verification

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Abstract

Gallium Nitride's superior physical properties, in comparison with other semiconductors, make GaNHEMT active devices a prime candidate in the implementation of next generation transmitters for radar systems, 3G/4G base stations and WiMAX. In this contribution, the characterization, modelling and verification of different families of high efficiency, high- power devices manufactured at SELEX Sistemi Integrati are reported. Process, characterization and modelling phases are analyzed to improve and refine the technology's fabrication techniques, thermal degradation issues and dispersion phenomena.

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Italy

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Keywords

FETs characterization; GaN technology; Load pull

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