Photoelectrochemical oxidation enhances optical output power in GaN-based light emitting diodes

null Chia-Feng Lin; null Zhong-Jie Yang; null Jing-Hui Zheng

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https://doi.org/10.1109/cleo.2...

Article . 2005 . Peer-reviewed

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https://dx.doi.org/10.1109/cle...

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Photoelectrochemical oxidation enhances optical output power in GaN-based light emitting diodes

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 2005Publisher:IEEEJournal:(CLEO). Conference on Lasers and Electro-Optics, 2005.

Authors: null Chia-Feng Lin; null Zhong-Jie Yang; null Jing-Hui Zheng;

doi: 10.1109/cleo.2005.201709

Photoelectrochemical oxidation enhances optical output power in GaN-based light emitting diodes

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Abstract

Using the photoelectrochemical (PEC) oxidation process, the output power was increased by about 40%, caused by a reduced index reflectance from the GaN material to the outside air, and an increased roughness in the oxidized sidewalls. In addition, the enhanced output power was decreased when the PEC oxidation time was increased. These PEC treated InGaN/GaN MQW LEDs are suitable for all Nitride-based LED lighting applications.

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National Chung Hsing University
Taiwan

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