SiC Schottky Diode for Use in Power Convertors

M. Pikkov; T. Rang; A. Pokatilov

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Article . 2006 . Peer-reviewed

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SiC Schottky Diode for Use in Power Convertors

descriptionPublicationkeyboard_double_arrow_right Article 01 Oct 2006Publisher:IEEEJournal:2006 International Biennial Baltic Electronics Conference (issn: 1736-3705,

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Authors: M. Pikkov; T. Rang; A. Pokatilov;

doi: 10.1109/bec.2006.311109

SiC Schottky Diode for Use in Power Convertors

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Abstract

The specification characteristics of power electronic applications can be improved by use of the recent high-speed power devices. The Schottky structure has been developed for direct type converter circuits. The description of real layout and testing methodology of an experimental sample of 4H-SiC Schottky barrier diode manufactured by diffusion welding has been given. Presented results of timing for reverse recovery time are described according to the sample of the direct current regulator.

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