Fabrication of 3.1kV/10A 4H-SiC Junction Barrier Schottky Diodes

descriptionPublicationkeyboard_double_arrow_right Article , Conference object 01 Nov 2015Publisher:IEEEJournal:2015 IEEE 11th International Conference on ASIC (ASICON)

Authors: Chengsen Wang; Hao Yuan; Qingwen Song; XiaoYan Tang; Renxu Jia; Yuming Zhang; Yimen Zhang; +1 Authors

doi: 10.1109/asicon.2015.7517153

Fabrication of 3.1kV/10A 4H-SiC Junction Barrier Schottky Diodes

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Abstract

A 4H-SiC Junction Barrier Schottky Diodes(JBSs) based on 30μm, 3∗1015cm−3 epitaxial structures was fabricated by using metal Ti as the Schottky metal. The Non-linearly limit field rings (NL-FLRs) is used as termination for protecting the anode edge. The fabricated device shows a breakdown voltage of 3.1kV at reverse leakage current of 200uA and the forward current of 11A at the voltage drop of 3 V, corresponding to a current density of 275A/cm2, of which the on-resistance is 7.3 mΩ•cm2. Finally, the 5266 MW/cm2 BFOM value of fabricated SiC JBSs is achieved. The results show our fabricated SiC JBSs has an excellent performance.

Related Organizations

Xidian University
China (People's Republic of)

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