CMOS devices and circuits for microwave and millimeter wave applications

descriptionPublicationkeyboard_double_arrow_right Article , Other literature type , Conference object 01 Dec 2006 Italy Publisher:IEEEJournal:2006 Asia-Pacific Microwave Conference

Authors: Ferndahl, M.; Motlagh, B.M.; Masud, A.; Angelov, I.; Vickes, H. -O.; Zirath, H.;

doi: 10.1109/apmc.2006.4429609 , 10.6092/unibo/amsacta/1477

CMOS devices and circuits for microwave and millimeter wave applications

- Summary
- Subjects
- Metrics

Abstract

We present several building blocks for RF front ends at micro and mm-wave frequencies using 90 nm CMOS. The designs are 20 GHz single- and 40 GHz double stage amplifiers with 5.6 and 7.3 dB gain respectively, a 20 GHz resistive mixer with CL = 7.9 dB and IIP3 = 17.5 dBm plus frequency doublers to 40 and 60 GHz with CL = 15.8 and 15.3 dB respectively. All circuits have been designed using distributed elements. Both using a 5 metal layer BEOL process and a 3 metal layer BEOL with post processing.

Country

Italy

Related Organizations

Alma Mater Studiorum University of Bologna
Italy
Chalmers University of Technology
Sweden
SAAB AUTOMOBILE POWERTRAIN AB
Sweden

Keywords

ING-INF/01 Elettronica

Impact byBIP!

	selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	1
	popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.	Average
	influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	Average
	impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.	Average