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https://doi.org/10.1109/978047...
Part of book or chapter of book . 2009 . Peer-reviewed
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https://dx.doi.org/10.1109/978...
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Power Semiconductor Devices

descriptionPublicationkeyboard_double_arrow_right Part of book or chapter of book , Other literature type 01 Jan 2009 English Publisher:IEEE

doi: 10.1109/9780470546802.ch2

Power Semiconductor Devices

Abstract

This chapter contains sections titled: Perspective on Power Devices Principal High-Power Device Characteristics and Requirements Power Device Material Diode (Pn Junction) Transistor Thyristor (without Turn-Off Capability) Gate Turn-Off Thyristor (GTO) MOS Turn-Off Thyristor (MTO) Emitter Turn-Off Thyristor (ETO) Integrated Gate-Commutated Thyristor (GCT and IGCT) Insulated Gate Bipolar Transistor (IGBT) MOS-Controlled Thyristor (MCT) This chapter contains sections titled: References ]]>

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
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