A metal-oxide-semiconductor varactor
Copyright policy )A metal-oxide-semiconductor varactor
CMOS technology scaling opens up the possibility of designing variable capacitors based on a metal oxide semiconductor structure with improved tuning range and quality factor. This is due to an increase in the oxide capacitance and a reduction in the parasitic resistance. A prototype metal-oxide-semiconductor (MOS) variable capacitor of 3.1 pF nominal value has been realized in a 0.35-/spl mu/m standard CMOS process. A factor two capacitance change has been achieved for a 2-V variation of the controlling voltage. The varactor Q ranges from 17 to 35, at 1.8 GHz.
- University of Pavia Italy
- University of Bergamo Italy
- STMicroelectronics (Switzerland) Switzerland
UHF INTEGRATED CIRCUITS, VARACTORS, CIRCUIT TUNING, CONTROLLING VOLTAGE, VOLTAGE-CONTROLLED OSCILLATORS, CMOS INTEGRATED CIRCUITS, 600, 1.8 GHZ, CAPACITANCE CHANGE, METAL-OXIDE-SEMICONDUCTOR VARACTOR, 620, CMOS TECHNOLOGY SCALING, 3.1 PF, Q FACTOR, 0.35 MICRON, Q-FACTOR
UHF INTEGRATED CIRCUITS, VARACTORS, CIRCUIT TUNING, CONTROLLING VOLTAGE, VOLTAGE-CONTROLLED OSCILLATORS, CMOS INTEGRATED CIRCUITS, 600, 1.8 GHZ, CAPACITANCE CHANGE, METAL-OXIDE-SEMICONDUCTOR VARACTOR, 620, CMOS TECHNOLOGY SCALING, 3.1 PF, Q FACTOR, 0.35 MICRON, Q-FACTOR
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