Resonant interband tunneling FET

descriptionPublicationkeyboard_double_arrow_right Article 01 Dec 1995Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Electron Device Letters, volume 16, pages 557-559 (issn: 0741-3106, eissn: 1558-0563,

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Authors: S. Tehrani; J. Shen; H. Goronkin; G. Kramer; R. Tsui; T.X. Zhu;

doi: 10.1109/55.475586

Resonant interband tunneling FET

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Abstract

A lateral three-terminal Resonant Interband Tunneling Field Effect Transistor (RITFET) has been fabricated. It consists of a resonant interband tunnel diode (RITD) built using the GaSb-AlSb-InAs material system and a pseudomorphic InGaAs channel FET in which the current is controlled by a Schottky gate. The three terminal device has current-voltage characteristics that exhibit negative differential conductance with a peak-to-valley current ratio of 8 at room temperature.

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