GaAs power MESFET with 41-percent power-added efficiency at 35 GHz

descriptionPublicationkeyboard_double_arrow_right Article 01 Feb 1988Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Electron Device Letters, volume 9, pages 57-58 (issn: 0741-3106, eissn: 1558-0563,

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Authors: B. Kim; M. Wurtele; H.D. Shih; H.Q. Tserng;

doi: 10.1109/55.2039

GaAs power MESFET with 41-percent power-added efficiency at 35 GHz

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Abstract

A GaAs power MESFET has been optimized for Ka-Band operation. The device has an n/sup +/ ledge channel structure with a 0.25- mu m gate on MBE-grown material. An output power density of 0.71 W/mm was achieved with 5.2-dB gain and 34% power-added efficiency. When tuned for maximum efficiency, a power-added efficiency of 41% was obtained with a power density of 0.61 W/mm and a gain of 5.6 dB. >

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Texas Instruments (United States)
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