Optimization of power MOSFET body diode for speed and ruggedness

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 1990Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Transactions on Industry Applications, volume 26, pages 793-797 (issn: 0093-9994,

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Authors: H. Yilmaz; K. Owyang; P.O. Shafer; C.C. Borman;

doi: 10.1109/28.56007

Optimization of power MOSFET body diode for speed and ruggedness

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Abstract

The built-in diode in the power MOSFET can be used as an integral flyback diode in a power electronics circuit. However, if the power MOSFET is not optimized for utilization of the built-in diode, it can catastrophically fail during the diode mode of operation. A failure mechanism is proposed and discussed. It is found that through improved design with optimized cell geometry, vertical device structure, and electron irradiation, a rugged power MOSFET can be made such that the built-in diode will operate successfully as a flyback diode without inducing failure to the power MOSFET device. >

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