Ground-based single event effect (SEE) testing of microcircuits permits characterization of device susceptibility to various radiation induced disturbances, including: (1) single event upset (SEU) and single event latchup (SEL) in digital microcircuits; (2) single event gate rupture (SEGR), and single event burnout (SEB) in power transistors; and (3) bit errors in photonic devices. These characterizations can then be used to generate predictions of device performance in the space radiation environment. This paper provides a general overview of ground-based SEE testing and examines in critical depth several underlying conceptual constructs relevant to the conduct of such tests and to the proper interpretation of results. These more traditional issues are contrasted with emerging concerns related to the testing of modern, advanced microcircuits.