Inverse staggered poly-Si and amorphous Si double structure TFT's for LCD panels with peripheral driver circuits integration

descriptionPublicationkeyboard_double_arrow_right Article 01 May 1996Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Transactions on Electron Devices, volume 43, pages 701-705 (issn: 0018-9383,

Authors: Yasuhiro Mochizuki; Kazuhiro Ogawa; Takashi Aoyama; Nobutake Konishi;

doi: 10.1109/16.491245

Inverse staggered poly-Si and amorphous Si double structure TFT's for LCD panels with peripheral driver circuits integration

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Abstract

Inverse staggered polycrystalline silicon (poly-Si) and hydrogenated amorphous silicon (a-Si:H) double structure thin-film transistors (TFT's) are fabricated based on the conventional a-Si:H TFT process on a single glass substrate. After depositing a thin (20 nm) a-Si:H using the plasma CVD technique at 300/spl deg/C, Ar/sup +/ and XeCl (300 mJ/cm/sup 2/) lasers are irradiated successively, and then a thick a-Si:H (200 nm) and n/sup +/ Si layers are deposited again. The field effect mobilities of 10 and 0.5 cm /sup 2//V/spl middot/s are obtained for the laser annealed poly-Si and the a-Si:H (without annealing) TFT's, respectively.

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Hitachi (Japan)
Japan

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