High-speed InP/InGaAs photodiode on sapphire substrate prepared by epitaxial lift-off

descriptionPublicationkeyboard_double_arrow_right Article 01 Nov 1989Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Transactions on Electron Devices, volume 36, page 2,625 (issn: 0018-9383, eissn: 1557-9646,

Copyright policy )

Authors: H. Schumacher; T.J. Gmitter; H.P. LeBlanc; R. Bhat; E. Yablonovitch; M.A. Koza;

doi: 10.1109/16.43751

High-speed InP/InGaAs photodiode on sapphire substrate prepared by epitaxial lift-off

- Summary
- Metrics

Abstract

Summary form only given. A lift-off technique for epitaxial layers with subsequent deposition on a different substrate was applied to InP/InGaAs devices, demonstrating the ability to combine long-wavelength optoelectronic devices with electronic components from different material systems, e.g. GaAs. Furthermore, it was found that a passivation layer and an interconnecting final metal layer can be applied to the devices after lift-off on the new host substrate. The lift-off process is described in detail. >

Impact byBIP!

	selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	0
	popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.	Average
	influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	Average
	impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.	Average