Frequency Entrainment in Optically Injected Semiconductor Lasers

descriptionPublicationkeyboard_double_arrow_right Article 24 Mar 1997 Belgium English Publisher:American Physical Society (APS)Journal:Physical Review Letters, volume 78, pages 2,353-2,356 (issn: 0031-9007, eissn: 1079-7114,

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Authors: Varangis, Petros; Gavrielides, A.; Erneux, Thomas; Kovanis, Vassilios; Lester, Luke;

doi: 10.1103/physrevlett.78.2353

handle: 2013/ULB-DIPOT:oai:dipot.ulb.ac.be:2013/31902

Frequency Entrainment in Optically Injected Semiconductor Lasers

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Abstract

We theoretically predict and experimentally demonstrate the phenomenon of frequency entrainment in optically injected semiconductor lasers. The laser exhibits nonlinear subharmonic and ultraharmonic resonances for appropriate values of its frequency detuning from the externally injected signal.

Country

Belgium

Related Organizations

Université Libre de Bruxelles
Belgium
Phillips Laboratory
United States Air Force Research Laboratory
United States
University of New Mexico
United States

Keywords

Physique

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