Average density of states in disordered graphene systems
Copyright policy )Average density of states in disordered graphene systems
In this paper, the average density of states (ADOS) with a binary alloy disorder in disordered graphene systems are calculated based on the recursion method. We observe an obvious resonant peak caused by interactions with surrounding impurities and an anti-resonance dip in ADOS curves near the Dirac point. We also find that the resonance energy (Er) and the dip position are sensitive to the concentration of disorders (x) and their on-site potentials (v). An linear relation, not only holds when the impurity concentration is low but this relation can be further extended to high impurity concentration regime with certain constraints. We also calculate the ADOS with a finite density of vacancies and compare our results with the previous theoretical results.
10 pages, 8 figures
- University of Science and Technology of China China (People's Republic of)
- Nanyang Technological University Singapore
- University of Alberta Canada
- Hong Kong University of Science and Technology (香港科技大學) China (People's Republic of)
- Hong Kong Polytechnic University China (People's Republic of)
:Engineering::Materials::Nanostructured materials [DRNTU], Condensed Matter - Mesoscale and Nanoscale Physics, DRNTU::Engineering::Materials::Nanostructured materials, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), FOS: Physical sciences, 530
:Engineering::Materials::Nanostructured materials [DRNTU], Condensed Matter - Mesoscale and Nanoscale Physics, DRNTU::Engineering::Materials::Nanostructured materials, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), FOS: Physical sciences, 530
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