Chaos in resonant-tunneling superlattices

descriptionPublicationkeyboard_double_arrow_right Article , Preprint 15 Sep 1995Embargo end date: 01 Jun 1995 Spain English Publisher:American Physical Society (APS)Journal:Physical Review B, volume 52, pages 7,849-7,852 (issn: 0163-1829, eissn: 1095-3795,

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Authors: Bulashenko, Oleg; Bonilla, L. L. (Luis López), 1956-;

doi: 10.1103/physrevb.52.7849 , 10.48550/arxiv.cond-mat/9506030

pmid: 9979770

arXiv: cond-mat/9506030

handle: 2445/10914

Chaos in resonant-tunneling superlattices

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Abstract

Spatio-temporal chaos is predicted to occur in n-doped semiconductor superlattices with sequential resonant tunneling as their main charge transport mechanism. Under dc voltage bias, undamped time-dependent oscillations of the current (due to the motion and recycling of electric field domain walls) have been observed in recent experiments. Chaos is the result of forcing this natural oscillation by means of an appropriate external microwave signal.

3 pages, LaTex, RevTex, 3 uuencoded figures (1.2M) are available upon request from oleg@arwen.uc3m.es, to appear in Phys.Rev.B

Country

Spain

Related Organizations

University of Barcelona
Spain
Carlos III University of Madrid
Spain
Escola Politècnica Superior d'Alcoi
Spain

Keywords

Semiconductors, Fluid dynamics, Dinàmica de fluids, Tunneling (Physics), Condensed Matter (cond-mat), FOS: Physical sciences, Efecte túnel, Condensed Matter, Chaotic Dynamics (nlin.CD), Nonlinear Sciences - Chaotic Dynamics

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