Moore's Law state that, the number of transistors in silicon chip will be doubled every 2 years. The size of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) will be scaled down. MOSFET is a semiconductor device that used for switching and amplifying. As the MOSFET shrunk down, there will be Short Channel Effect (SCE) occur which can affect the performance of chi p. Therefore, Silicon on Insulator (SOI) technology have been introduced as a solution to the problem. The aim of this research is to investigate the effect of channel doping concentration of SOI MOSFET using SILVACO TCAD Simulator. By adding a layer of buried oxide (BOX ) on the top of silicon substrate, the electrical characteristic of MOSFET can be improved and the performance will increase. Simulation results were observed using TCAD tools, SILVACO (ATHENA, ATLAS and Tony-Plot). Based on the observation, increasing dose of doping concentration leads to increasing on threshold voltage (Vt) and decrease the leakage current (Ioff).