New types of oxide layers of Si and GaAs were grown on (100) Si and (100) GaAs substrate by using an electron beam doping technique at 40–50 °C. The surfaces of the semiconductors were irradiated with a fluence of ∼5×1017 electrons cm−2 at 7 MeV. The samples were put in an isothermal circulating water bath with a thermoregulator. The electronic structure of the oxide layers was observed by an x-ray photoelectron spectroscopy (XPS). The chemical shifts between oxidized and nonoxidized Ga signals for Auger electron spectra and 3d XPS spectra were nearly equal to that in the conventional plasma-grown oxidation. It was suggested that the electron beam doping, oxidation, and epitaxy were caused by plasma reaction.