High-power conversion efficiency quantum well diode lasers

R. G. Waters; D. K. Wagner; D. S. Hill; P. L. Tihanyi; B. J. Vollmer

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Applied Physics Letters

Article . 1987 . Peer-reviewed

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https://dx.doi.org/10.1063/1.9...

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High-power conversion efficiency quantum well diode lasers

descriptionPublicationkeyboard_double_arrow_right Article 26 Oct 1987 English Publisher:AIP PublishingJournal:Applied Physics Letters, volume 51, pages 1,318-1,319 (issn: 0003-6951, eissn: 1077-3118,

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Authors: R. G. Waters; D. K. Wagner; D. S. Hill; P. L. Tihanyi; B. J. Vollmer;

doi: 10.1063/1.98715

High-power conversion efficiency quantum well diode lasers

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Abstract

cw power conversion efficiencies of 57% have been obtained on uncoated diode lasers emitting nearly 300 mW per facet. This performance is achieved by using a low-resistance graded index separate confinement single quantum well AlGaAs/GaAs structure with high (84%) differential quantum efficiency and low threshold current.

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