Temperature dependence of shunt resistance in photovoltaic devices

S. Banerjee; W. A. Anderson

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Applied Physics Lett...arrow_drop_down

Applied Physics Letters

Article . 1986 . Peer-reviewed

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https://dx.doi.org/10.1063/1.9...

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Temperature dependence of shunt resistance in photovoltaic devices

descriptionPublicationkeyboard_double_arrow_right Article 07 Jul 1986 English Publisher:AIP PublishingJournal:Applied Physics Letters, volume 49, pages 38-40 (issn: 0003-6951, eissn: 1077-3118,

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Authors: S. Banerjee; W. A. Anderson;

doi: 10.1063/1.97076

Temperature dependence of shunt resistance in photovoltaic devices

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Abstract

Shunt resistance in surface passivated Si solar cells has been experimentally shown to be temperature dependent with a maximum value of 2×107 Ω cm2. Mechanisms responsible for shunt resistance are identified as a combination of multistep tunneling and thermal trapping-detrapping of carriers through the defect states in the space-charge region.

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State University of New York at Potsdam
United States

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