Interfacial properties of indium tin oxide/indium phosphide devices

P. Sheldon; R. K. Ahrenkiel; R. E. Hayes; P. E. Russell

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Applied Physics Lett...arrow_drop_down

Applied Physics Letters

Article . 1982 . Peer-reviewed

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https://dx.doi.org/10.1063/1.9...

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Interfacial properties of indium tin oxide/indium phosphide devices

descriptionPublicationkeyboard_double_arrow_right Article 15 Oct 1982 English Publisher:AIP PublishingJournal:Applied Physics Letters, volume 41, pages 727-729 (issn: 0003-6951, eissn: 1077-3118,

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Authors: P. Sheldon; R. K. Ahrenkiel; R. E. Hayes; P. E. Russell;

doi: 10.1063/1.93656

Interfacial properties of indium tin oxide/indium phosphide devices

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Abstract

Efficient indium tin oxide (ITO)/p-InP solar cells have been fabricated by ion beam deposition. In this letter, a critical evaluation of the ITO/InP interface is presented using complementary capacitance-voltage and ion microprobe measurements. We have found that deposition of ITO produces a semi-insulating region at the InP surface. This high resistivity layer extends about 750 Å into the bulk. We have evidence that this region is due to surface accumulation of compensating impurities.

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