A silicon heterojunction transistor

T. Matsushita; N. Oh-uchi; H. Hayashi; H. Yamoto

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Applied Physics Lett...arrow_drop_down

Applied Physics Letters

Article . 1979 . Peer-reviewed

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https://dx.doi.org/10.1063/1.9...

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A silicon heterojunction transistor

descriptionPublicationkeyboard_double_arrow_right Article 01 Oct 1979 English Publisher:AIP PublishingJournal:Applied Physics Letters, volume 35, pages 549-550 (issn: 0003-6951, eissn: 1077-3118,

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Authors: T. Matsushita; N. Oh-uchi; H. Hayashi; H. Yamoto;

doi: 10.1063/1.91174

A silicon heterojunction transistor

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Abstract

SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas.

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