Observation of the transferred-electron effect in GaxIn1−xAsyP1−y

R. E. Hayes; R. M. Raymond

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Applied Physics Lett...arrow_drop_down

Applied Physics Letters

Article . 1977 . Peer-reviewed

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https://dx.doi.org/10.1063/1.8...

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Observation of the transferred-electron effect in GaxIn1−xAsyP1−y

descriptionPublicationkeyboard_double_arrow_right Article 15 Aug 1977 English Publisher:AIP PublishingJournal:Applied Physics Letters, volume 31, pages 300-301 (issn: 0003-6951, eissn: 1077-3118,

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Authors: R. E. Hayes; R. M. Raymond;

doi: 10.1063/1.89651

Observation of the transferred-electron effect in GaxIn1−xAsyP1−y

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Abstract

Transferred-electron oscillation in devices employing GaxIn1−xAsyP1−y as the active material has been observed. An oscillation threshold average field of (5.5–8.6) ×103 V/cm was determined for 1.05-eV band-gap material having x and y values of approximately 0.13 and 0.37, respectively. A pulsed device had an efficiency of 0.5% at 27.49 GHz.

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