Optical investigation of GaNAs
Optical investigation of GaNAs
A systematic study of the energy and time-resolved photoluminescence of GaInP/GaNxAs1−x double heterostructures has been performed for 0⩽x⩽1.3%. A large temperature-dependent optical-bowing coefficient (about 20–25 eV) is observed and the bandgap variation with temperature is found to depend on the nitrogen content. Finally, the minority-carrier lifetime is not simply related to the nitrogen content. Instead, the recombination rate is proportional to the majority-carrier concentration for x⩾0.3% and the carbon concentration for x⩽0.3%.
- University of North Texas United States
- National Renewable Energy Laboratory United States
Energy Gap, Carrier Lifetime, Temperature Dependence Meetings, Nitrogen, 36 Materials Science, Temperature Dependence, Gallium Arsenides, Gallium Nitrides, Recombination, Carbon, Meetings, Heterojunctions, Photoluminescence
Energy Gap, Carrier Lifetime, Temperature Dependence Meetings, Nitrogen, 36 Materials Science, Temperature Dependence, Gallium Arsenides, Gallium Nitrides, Recombination, Carbon, Meetings, Heterojunctions, Photoluminescence
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