Diamond Schottky diodes with ideality factors close to 1

A. Fiori; T. Teraji; Y. Koide

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Applied Physics Letters

Article . 2014 . Peer-reviewed

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https://dx.doi.org/10.1063/1.4...

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Diamond Schottky diodes with ideality factors close to 1

descriptionPublicationkeyboard_double_arrow_right Article 29 Sep 2014 English Publisher:AIP PublishingJournal:Applied Physics Letters, volume 105 (issn: 0003-6951, eissn: 1077-3118,

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Authors: A. Fiori; T. Teraji; Y. Koide;

doi: 10.1063/1.4897315

Diamond Schottky diodes with ideality factors close to 1

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Abstract

The stabilization by vacuum annealing of tungsten carbide/p-diamond Schottky barrier diodes (SBDs) has been investigated. The Schottky barrier height (ϕB) and ideality factor (n), at high temperature, were consistently estimated by employing a vertical SBD structure. An exponential drop of ϕB in time at 600 K and its stabilization at 1.46 eV after 90 min were reported. The lowest n among SBDs examined was close to 1.0 at 600 K. A linear relation between ϕB and n in a statistical electrical characterization suggests a ϕB inhomogeneity.

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National Institute for Materials Science
Japan

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