Thermal desorption spectroscopy from the surfaces of metal-oxide-semiconductor nanostructures

descriptionPublicationkeyboard_double_arrow_right Article 01 Oct 2014 English Publisher:AIP PublishingJournal:Review of Scientific Instruments, volume 85 (issn: 0034-6748, eissn: 1089-7623,

Copyright policy )Funded by:DFG | unidentified

Authors: Meyburg, Jan-Philipp; Nedrygailov, Ievgen I.; Hasselbrink, Eckart; Diesing, Detlef;

doi: 10.1063/1.4896979

pmid: 25362420

Thermal desorption spectroscopy from the surfaces of metal-oxide-semiconductor nanostructures

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Abstract

An experimental setup, which combines direct heating and temperature measurement of metal nanofilms allowing temperature programmed desorption experiments is described. This setup enables the simultaneous monitoring of the thermal desorption flux from the surface of chemi-electric devices and detection of chemically induced hot charge carriers under UHV conditions. This method is demonstrated for the case of water desorption from a Pt/SiO2-n-Si metal-oxide-semiconductor nanostructure.

Related Organizations

University of Duisburg-Essen
Germany

Keywords

Chemie

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