
doi: 10.1063/1.4867775
handle: 10044/1/13740
The Seebeck coefficient of one electron, driven thermally into a semiconductor single-electron box, is investigated theoretically. With a finite temperature difference ΔT between the source and charging island, a single electron can charge the island in equilibrium, directly generating a Seebeck effect. Seebeck coefficients for small and finite ΔT are calculated and a thermally driven Coulomb staircase is predicted. Single-electron Seebeck oscillations occur with increasing ΔT, as one electron at a time charges the box. A method is proposed for experimental verification of these effects.
Science & Technology, DEVICES, 02 Physical Sciences, Physics, TUNNEL-JUNCTIONS, MEMORY, 530, 09 Engineering, THERMOPOWER, QUANTUM-DOT, Physical Sciences, Applied, THERMOELECTRIC-MATERIALS, OSCILLATIONS, SILICON, 01 Mathematical Sciences, Applied Physics
Science & Technology, DEVICES, 02 Physical Sciences, Physics, TUNNEL-JUNCTIONS, MEMORY, 530, 09 Engineering, THERMOPOWER, QUANTUM-DOT, Physical Sciences, Applied, THERMOELECTRIC-MATERIALS, OSCILLATIONS, SILICON, 01 Mathematical Sciences, Applied Physics
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