Thermal photovoltaic cells

P. R. Sharps; M. L. Timmons; R. Venkatasubramanian; J. S. Hills; B. O’Quinn; J. A. Hutchby; P. A. Iles; C. L. Chu

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https://doi.org/10.1063/1.4702...

Article . 1995 . Peer-reviewed

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https://dx.doi.org/10.1063/1.4...

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Thermal photovoltaic cells

descriptionPublicationkeyboard_double_arrow_right Article , Other literature type 01 Jan 1995Publisher:AIPJournal:AIP Conference Proceedings, volume 321, pages 194-201 (issn: 0094-243X,

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Authors: P. R. Sharps; M. L. Timmons; R. Venkatasubramanian; J. S. Hills; B. O’Quinn; J. A. Hutchby; P. A. Iles; +1 Authors

doi: 10.1063/1.47023

Thermal photovoltaic cells

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Abstract

Most current emphasis is on GaInAs alloys or GaSb for thermal photovoltaic converters operating in a band gap range between about 0.50 to 0.75 eV. In this paper the growth and fabrication of GaInAs devices with nominal band gaps of 0.6 eV are described. Yield statistics are presented for the growth of a large number of devices, and I‐V data are presented. Alternative cell structures are also described, and manufacturing issues are discussed.

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