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Electronic states of GaAs and GaAs+

Authors: K. Balasubramanian;

Electronic states of GaAs and GaAs+

Abstract

Complete active space MCSCF (CASSCF) followed by first-order configuration interaction (FOCI) calculations are carried out on low-lying electronic states of GaAs and GaAs+. Among the 12 electronic states of GaAs considered here, six of them are bound and their spectroscopic properties are calculated. The ground state of GaAs is found to be 3∑− with a 3Π state only 1569 cm−1 above the 3∑− state. The ground state of GaAs+ is found to be 4∑− state. The vertical ionization potential of GaAs is calculated to be 5.91 eV. Our calculations predict the electronic spectra of GaAs and GaAs+ which are yet to be observed.

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
63
Top 10%
Top 10%
Top 10%
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