Frequency stabilized semiconductor lasers have many applications in spectroscopy, metrology and coherent communication systems. The last trends and results on frequency stabilization of laser diodes are presented in the report.Three laser systems are considered: a solitary laser diode, a diode with integrated composite cavity, and a semiconductor laser with external optical feedback. The number of parameters to be stabilized and the required stability of the parameters are compared for these systems.The transmission (reflection) resonances of high‐Q cavities, the absorption (both Doppler limited and Doppler free) lines of alkali‐, alkali‐earh metals, and some other atomic and molecular transitions are analyzed as possible reference for frequency stabilization of III‐V lasers.Different techniques of frequency (and frequency difference) stabilization are described with the best results achieved.