A modified model of a triangular barrier diode has been proposed and analyzed by considering the effect of low to moderate p-type doping in the two intrinsic regions. The presence of such acceptor impurities is shown to increase the effective barrier height. The functional dependence of barrier height, saturation current, and ideality factor on various technological parameters is discussed. A method to determine the barrier height and effective Richardson constant has also been suggested. The high-speed switching behavior of this diode is shown to improve.