Photoconductivity and photovoltaic effect in indium selenide

descriptionPublicationkeyboard_double_arrow_right Article 01 Feb 1983 English Publisher:AIP PublishingJournal:Journal of Applied Physics, volume 54, pages 876-888 (issn: 0021-8979, eissn: 1089-7550,

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Authors: Segura García del Río, Alfredo; Guesdon, J.P.; Besson, J.M.; Chevy, A.;

doi: 10.1063/1.332050

handle: 10550/12923

Photoconductivity and photovoltaic effect in indium selenide

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Abstract

Transport and phototransport properties of crystalline indium monoselenide (InSe) doped with a variety of elements are reported. Measured mobilities, lifetimes, and effective diffusion lengths of photoexcited carriers are used to interpret electrical and photovoltaic properties of several different structures. These include p-n junctions, bismuth/p-type InSe, platinum/n-type InSe, and indium tin oxyde (ITO)/p-type InSe. External solar efficiencies of the best devices are between 5% and 6%. The influence on the efficiency of the various parameters is evaluated, and ways of improvement are discussed.

Related Organizations

University of Paris-Sud
France
Laboratory of Solid State Physics
France

Keywords

Photoconductivity, N−Type Conductors, Indium Compounds, Efficiency, Crystals, Photovoltaic Effect, Charge Carriers, P−Type Conductors, :FÍSICA [UNESCO], Doped Materials, Platinum, Mobility, Indium Selenides, Electrical Properties, P−N Junctions, UNESCO::FÍSICA, Tin Oxides, Diffusion Length, Experimental Data, Bismuth, Lifetime

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