Reactive magnetron sputtering of ZnO

descriptionPublicationkeyboard_double_arrow_right Article 01 Jul 1981 English Publisher:AIP PublishingJournal:Journal of Applied Physics, volume 52, pages 4,772-4,774 (issn: 0021-8979, eissn: 1089-7550,

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Authors: B. T. Khuri-Yakub; J. G. Smits; T. Barbee;

doi: 10.1063/1.329315

Reactive magnetron sputtering of ZnO

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Abstract

A planar magnetron with a zinc target is used to sputter zinc oxide in an oxygen atmosphere. Highly oriented zinc oxide films are obtained on a variety of subtrates such as gold, aluminum, platinum, quartz, and oxidized silicon. The sputtering rate is typically 10–20 μm/h for a substrate temperature of 450–500 °C, a substrate-to-target spacing of 4–7 cm, an oxygen partial pressure of 7 μm, and an input rf power of 1–1.25 kW. The films are evaluated by acoustic measurements, x-ray diffraction, reflection electron diffraction, and scanning electron microscopy.

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Stanford University
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