Noise-equivalent power in highly doped infrared Schottky-barrier diodes without substrate

descriptionPublicationkeyboard_double_arrow_right Article 01 Dec 1976 English Publisher:AIP PublishingJournal:Journal of Applied Physics, volume 47, pages 5,487-5,488 (issn: 0021-8979, eissn: 1089-7550,

Copyright policy )

Authors: A. van der Ziel;

doi: 10.1063/1.322548

Noise-equivalent power in highly doped infrared Schottky-barrier diodes without substrate

- Summary
- Metrics

Abstract

The noise-equivalent power of heavily doped infrared silicon Schottky-barrier diodes is calculated for the case in which the substrate has been eliminated. Assuming an antenna radiation resistance Ra=100 Ω and minimizing Peq at λ=10 μm for an impurity concentration of 1019/cm3 yields Peq=10−12 W/Hz1/2 for the detector and Peq=4.8×10−17 W/Hz for the mixer.

Related Organizations

University of Minnesota Morris
United States

Impact byBIP!

	selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	0
	popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.	Average
	influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	Average
	impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.	Average