Secondary electron emission from GaAs

W.A. Gutierrez; H.D. Pommerrenig; S.L. Holt

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Applied Physics Lett...arrow_drop_down

Applied Physics Letters

Article . 1972 . Peer-reviewed

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https://dx.doi.org/10.1063/1.1...

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Secondary electron emission from GaAs

descriptionPublicationkeyboard_double_arrow_right Article 15 Sep 1972 English Publisher:AIP PublishingJournal:Applied Physics Letters, volume 21, pages 249-250 (issn: 0003-6951, eissn: 1077-3118,

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Authors: W.A. Gutierrez; H.D. Pommerrenig; S.L. Holt;

doi: 10.1063/1.1654364

Secondary electron emission from GaAs

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Abstract

Secondary emission measurements have been made on thick and thin epitaxially grown p-doped GaAs. Reflection mode gains of 400 at primary voltages of 20 kV have been observed for unthinned layers. The variation of gain with white-light photoresponse has also been measured. For 5-μ-thick self-supporting layers, a gain of 115 and 30 (at 10 kV primary voltage) has been measured for the reflection and transmission modes, respectively. The escape depth is estimated to be 2 μ with an escape probability of 0.14.

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