A theoretical expression for surface photovoltage VSPV in semiconductor structures with a single or series of quantum wells in the space charge region is derived. The cases of both linear and quadratic recombination in the quantum wells are considered. For photon energies ℏω less than the band gap of the barrier layer Eg1, the photovoltage spectrum VSPV(ω) is determined by the absorption spectrum in quantum wells, whereas for ℏω>Eg1, VSPV=const(ω). The model results are in good agreement with experimental data.