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Applied Physics Letters

Article . 1996 . Peer-reviewed

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Applied Physics Letters

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Enhancement of the light-to-current conversion efficiency in an n-SiC/solution diode by porous etching

descriptionPublicationkeyboard_double_arrow_right Article 07 Oct 1996 English Publisher:AIP PublishingJournal:Applied Physics Letters, volume 69, pages 2,246-2,248 (issn: 0003-6951, eissn: 1077-3118,

Authors: J. van de Lagemaat; M. Plakman; John J. Kelly; Daniel Vanmaekelbergh;

doi: 10.1063/1.117142

Enhancement of the light-to-current conversion efficiency in an n-SiC/solution diode by porous etching

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Abstract

Scanning electron microscopy micrographs of n-type silicon carbide (SiC) anodized in HF solution showed a highly porous layer having structures with dimensions of about 50 nm. The capacitance of the porous electrodes revealed a huge surface area. The photocurrent quantum yield of a porous SiC/electrolyte diode is spectacularly enhanced with respect to that of a flat diode for light absorbed in the indirect-bandgap and for sub-bandgap light.

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