C60 thin film transistors

descriptionPublicationkeyboard_double_arrow_right Article 03 Jul 1995 Netherlands English Publisher:AIP PublishingJournal:Applied Physics Letters, volume 67, pages 121-123 (issn: 0003-6951, eissn: 1077-3118,

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Authors: Haddon, R. C.; Perel, A. S.; Morris, R. C.; Palstra, T. T. M.; Hebard, A. F.; Fleming, R. M.;

doi: 10.1063/1.115503

handle: 11370/aa16a926-740a-4265-b2c3-6d901b2b9fba

C60 thin film transistors

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Abstract

N-channel field effect transistors with excellent device characteristics have been fabricated by utilizing C60 as the active element. Measurements on C60 thin films in ultrahigh vacuum show on-off ratios as high as 106 and field effect mobilities up to 0.08 cm2/V s.

Country

Netherlands

Related Organizations

University of Groningen
Netherlands
Alcatel-Lucent (France)
France

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