PHOTOELECTRICAL PHENOMENA AT THE ICE-SEMICONDUCTOR INTERFACE

descriptionPublicationkeyboard_double_arrow_right Article 01 Mar 1987Publisher:EDP SciencesJournal:Le Journal de Physique Colloques, volume 48, pages C1-99 (issn: 0449-1947,

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Authors: Chesnakov, V.; Petrenko, V.; Ryzhkin, I.; Zaretskii, A.;

doi: 10.1051/jphyscol:1987114

PHOTOELECTRICAL PHENOMENA AT THE ICE-SEMICONDUCTOR INTERFACE

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Abstract

A strong influence of light illumination on the direct current flowing through an ice-CdSe interface was detected. A new model of electric conductivity of ice based on "relay-race" transfer of electrons caused by ionic defects is proposed.

Related Organizations

Russian Academy of Sciences
Russian Federation
Institute of Solid State Physics
China (People's Republic of)
Institute of Solid State Physics
Russian Federation

Keywords

[PHYS.HIST] Physics [physics]/Physics archives

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